inchange semiconductor isc product specification isc silicon pnp power transistor BD950F/952f/954f/956f description dc current gain- : h fe = 40(min)@ i c = -500ma complement to type bd949f/951f/953f/955f applications designed for power amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit BD950F -60 bd952f -80 bd954f -100 v cbo collector-base voltage bd956f -120 v BD950F -60 bd952f -80 bd954f -100 v ceo collector-emitter voltage bd956f -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -5 a i cm collector current-peak -8 a p c collector power dissipation @ t c =25 22 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 8.12 /w isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor isc product specification isc silicon pnp power transistor BD950F/952f/954f/956f electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BD950F -60 bd952f -80 bd954f -100 v ceo(sus) collector-emitter sustaining voltage bd956f i c = -100ma ; i b = 0 -120 v v ce( sat ) collector-emitter saturation voltage i c = -2a; i b = -0.2a b -1.0 v v be( on ) base-emitter on voltage i c = -2a; v ce = -4v -1.4 v i cbo collector cutoff current v cb = v cbomax ; i e = 0 v cb = 1 / 2 v cbomax ; i e = 0,t j =150 -0.05 -1 ma i ceo collector cutoff current v ce = 1 / 2 v ceomax ; i b = 0 -0.1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.2 ma h fe-1 dc current gain i c = -500ma ; v ce = -4v 40 h fe-2 dc current gain i c = -2a ; v ce = -4v 20 f t current-gain?bandwidth product i c = -500ma ; v ce = -4v 3 mhz switching times t on turn-on time 0.3 s t off turn-off time i c = -1.0a; i b1 = -i b2 = -0.1a 1.5 s isc website www.iscsemi.cn 2 www.datasheet.co.kr datasheet pdf - http://www..net/
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